Transverse hybrid LOC package

ABSTRACT

A hybrid semiconductor package is formed from a die having two opposed elongate die edges with conductive bond pads arranged transversely relative to the rows of outer leads. A first portion of inner leads is off-die wire bonded to some of the bond pads, and a second portion of inner leads is insulatively attached as LOC leads between the bond pads along the opposed die edges. The hybrid package results in shorter inner leads of increased pitch enabling improved line yield at wire bond and encapsulation, as well as improved electrical performance, particularly for packages with very small dice.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 09/302,196,filed Apr. 29, 1999, pending, which is a divisional of application Ser.No. 09/137,782, filed Aug. 20, 1998 now U.S. Pat. No. 6,124,150, issuedon Sep. 26, 2000.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor devices in general and,more particularly, to the configuration of Leads-Over-Chip (LOC)semiconductor devices.

2. State of the Art

Modem packaged integrated circuits (IC) comprise one or moreencapsulated semiconductor devices, dies or chips within a protective“package” of plastic, ceramic or other moldable material. Typically, alarge number of dice are formed from a wafer made from a semiconductormaterial such as silicon, germanium or gallium arsenide. Microscopiccircuits are formed on a surface of each semiconductor die byphotolithographic techniques and typically attached to a lead frame withconductive wires. More particularly, a plurality of leads of the leadframe is connected to bond pads on the semiconductor die or dice,enabling the dice to be electrically interconnected to an externalelectrical host apparatus, typically mounted on a circuit board.

Early semiconductor devices used relatively large semiconductor dicewith peripheral bond pads. Off-die leads were wire-bonded to theperipheral bond pads. With the later introduction of Leads-Over-Chip(LOC) technology, the package size using large semiconductor die couldbe reduced. This was accomplished by using centrally positionedconductive bond pads on the semiconductor dice and insulatively bondingthe inner leads to the semiconductor die surface close to the bond padsfor wire connection. Thus, the semiconductor die and lead frame weremore intimately joined, and the outer leads could be formed close to oradjacent the semiconductor die.

In early LOC devices, the semiconductor die were relatively large,consuming most of the package space. The numbers of leads attached tothe semiconductor dice were also limited. Thus, wide and short leadswhich closely approached the bond pads on the active surface of thesemiconductor die were used. The resulting wirebonds were short, and theinductance between the semiconductor die and the host apparatus was low.Examples of such are found in U.S. Pat. No. 5,227,661 of Heinen, U.S.Pat. No. 5,233,220 of Lamson et al., U.S. Pat. No. 5,252,853 of Michii,U.S. Pat. 5,331,200 of Teo et al., U.S. Pat. No. 5,418,189 of Heinen,and U.S. Pat. No. 5,466,888 of Beng et al.

In later generation IC devices, the semiconductor dice have becomeprogressively smaller while the numbers of leads of the lead frame havetypically increased. As a result, the inner leads of the lead frame ofsuch devices must of necessity be reduced in lead width and pitch, bothof which increase the lead inductance and slow the speed of the device.In addition, a minimum lead width is required for high-quality wirebonding. The high density of wire connections typically makes wirebonding more difficult and increases the frequency of bond failures.Furthermore, with very small semiconductor dice, the very fine wires maybe very long, resulting in “wire sweep”, sagging, short circuiting andbond failure during encapsulation of the semiconductor die and leadframe. For a very small semiconductor die, fitting all of the innerleads of the lead frame onto the active surface of the semiconductor dieis generally not possible, given the present size and space limitations.Even conventional off-die wire bonding is very difficult or not possiblein production scale.

High inductance and reduced speed limit the usefulness of packagedsemiconductor dice with long, narrow leads, and shorting or destructionof the wire bonds will make the device useless.

The required spacing, width and length of leads and wires have becomeserious limitation in further miniaturization of semiconductor dies andtheir packages. While complex integrated circuits may be formed in verysmall semiconductor die, connecting such a die or dice to leads forinterconnection to a host apparatus while maintaining the semiconductordie characterization is very difficult.

There have been various attempts at overcoming the high inductance orinteractive conductance effects of small semiconductor die devices. Forexample, in U.S. Pat. No. 5,521,426 of Russell is disclosed alead-on-chip (LOC) device with long, narrow leads. In order to decreasethe capacitance between the leads and the die and increase leadstrength, the leads are stamped or rolled to have a non-rectangularcross-section such as a “U” configuration. Thus, the strength of thelead and its cross-sectional area are increased, resulting in less leadsag and lowered capacitative interaction. However, the cost of producingsuch leads is considerable, and the package thickness is increased.Furthermore, the method does not increase the size of wire bonding areason the lead fingers, and the wire bonding operation is no easier.

In U.S. Pat. No. 4,984,059 of Kubota et al., a semiconductor device isshown with the long sides of the die parallel to the rows of outer leadends, i.e. in a non-transverse configuration. The device has a verylimited number of pins.

U.S. Pat. No. 5,218,229 of Farnworth discloses a lead frame design inwhich a semiconductor die with opposing rows of peripheral bond pads onthe active surface of the die is positioned for off-die wire attachment.The rows of bond pads are perpendicular to the two rows of outer leadends.

U.S. Pat. No. 4,989,068 of Yasuhara et al. shows a semiconductor devicein which all leads are LOC leads between two rows of peripheral bondpads.

None of the above prior art documents discloses a high-speedsemiconductor device having a large number of bond pads on a small die,whereby the lead inductance is minimized and wire bonding operations areenhanced. The need exists for such a device.

SUMMARY OF THE INVENTION

In the invention, an improved device uses a hybrid leadframe/semiconductor die configuration wherein a semiconductor die havingperipheral or near-peripheral bond pads is positioned in a transversedirection relative to the lead frame. The inner leads, i.e. leadfingers, include a set of lead fingers configured to be wire-bondedoff-die to peripheral bond pads and another set of lead fingersconfigured for lead-over-chip (LOC) attachment inside of the row(s) ofwire bond pads. The resulting device has lead fingers of increased widthand pitch.

As a result of this hybrid lead frame/semiconductor die configuration,(a) lead inductance is decreased to ensure signal integrity, (b) wirebonding is faster, easier, and more accurate, (c) wire bond integrityand reliability are enhanced, (d) the shorter wires avoid problems with“wire sweep”, (e) the lead frame is stronger and less subject to damagein handling, (f) signal integrity is increased, (g) the speed grade ofthe device is increased because of the reduced lead/wire inductance, and(h) a higher value product may be manufactured at lower cost.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The drawings presented herein illustrate the prior art and the advancesof the present invention, in which the figures are not necessarily drawnto scale, whereby:

FIG. 1 is a plan view of a semiconductor die and attached 54-pin leadframe of an exemplary early generation prior art semiconductor device;

FIG. 1A is a perspective, partial view of a semiconductor lead frame ofan early generation prior art semiconductor device;

FIG. 2 is a plan view of a semiconductor die and attached lead frame ofan exemplary later generation prior art semiconductor device;

FIG. 3 is a plan view of a semiconductor die and attached lead frame ofan exemplary hybrid semiconductor device of the present invention; and

FIG. 4 is a cross-sectional end view of a semiconductor die and attachedlead frame of an exemplary hybrid semiconductor device of the invention,as taken along line 4—4 of FIG. 3.

DETAILED DESCRIPTION OF THE INVENTION

The invention is illustrated and compared with prior art devices, whichfor purposes of illustration are examples with the same number of pins,i.e. 54.

A die and lead frame configuration of an early generation prior artleads-over-chip (LOC) semiconductor device 10 is illustrated in drawingFIGS. 1 and 1A. As shown, the relatively large semiconductor die 12 ismounted on a substrate 14 with outlined edges 15. A bond pad row 22 ofelectrically conductive bond pads 24 with spacing 54 is located on theactive surface of the semiconductor die 12 and aligned generally alongthe longitudinal centerline 30, parallel to the opposing long sides 26of the semiconductor die 12, and extending generally between theopposing short sides 28. Two insulative layers 32 of Kapton polymer orsimilar material are adhesively joined to the active surface 34 ofsemiconductor die 12, one on each side of the bond pad row 22. Aconductive lead frame 16 is shown with inner leads 18 adhesively joinedto the insulative layers 32. The lead frame 16 comprises inner leads 18and outer leads 20 for connecting the bond pads 24 to an electricalapparatus, not shown. As shown, the outer leads 20 are directed outwardfrom the LOC semiconductor device 10 on opposite sides 36, i.e the longsides, of the lead frame 16. Thus, the bond pad row 22 of bond pads 24is parallel to the two opposing sides 36 of outer lead ends 38, 40.

As depicted in drawing FIG. 1, the inner ends 50 of the inner leads 18comprise wire bonding areas for attachment of conductive wires 48leading to specific bond pads 24 on the semiconductor die 12.

Following wire bonding, the semiconductor die 12 and attached lead frame16 are typically encapsulated with a polymer or ceramic material to forma packaged device. The dam bars 52 between the outer leads 20 are cutaway, and the outer leads are thus singulated, enabling electricalconnection of the bond pads 24 to an electronic apparatus, not shown,with minimum lead inductance. The outer leads 20 may be left as straightprojections, or bent to a J-shape, L-shape or other shape, dependingupon the apparatus to which the LOC semiconductor device 10 is to beconnected.

A typical prior art lead frame 16 is shown in drawing FIG. 1A as havinga recurring pattern 42 of inner leads 18 and outer leads or pins 20 foraccommodating a plurality of single semiconductor dice havinglongitudinal centerline 30. The leads 18, 20 are temporarilyinterconnected to each other and to the supportive lead frame rails 46by dam bars 52. Index holes 44 in the lead frame rails 46 permitsequential positioning of the lead frame 16 in a wire bonding machinefor joining the semiconductor die to the leads 18, 20. The lead frame 16has a width 58 typically ranging from less than about one inch (2.54cm.) to several inches or more.

In this early version of a LOC device, the large semiconductor die 12enabled the inner leads 18 to be of sufficient width 56 to avoidsignificant resistance and/or inductance effects, particularly at thedesign speeds typical of that period. The current need for much higherspeeds with smaller dice has limited the usefulness of these earlydevices.

An exemplary LOC semiconductor device 10 of a later generation is shownin drawing FIG. 2 following wire bonding. The semiconductor die 12 andlead frame 16 are configured the same as semiconductor die 12 and leadframe 16 of drawing FIG. 1. For purposes of comparison, the overall leadframe width 58 may be assumed to be the same as the lead frame width ofFIG. 1. The semiconductor die 12 is similar to the die of FIG. 1 withrespect to its central bond pad location along the centerline 30.However, the reduced size of the semiconductor die 12 provides about onethird of the surface area of the earlier semiconductor die 12 of drawingFIG. 1, and the bond pad spacing or pitch 54 is considerably reduced,i.e by nearly 50 percent. In drawing FIG. 2, the semiconductor die 12 isshown adhesively attached to a substrate 14 and has two insulativelayers 32 on its active surface 34 upon which inner leads 18 of the leadframe 16 are adhesively attached. The inner lead widths 56 are reducedby about 50 percent to accommodate the smaller semiconductor die 12. Inaddition, many of the inner leads 18 have an increased length.

Thus, the smaller semiconductor die 12 as depicted in drawing FIG. 2 hasan increased susceptibility to resistance and inductance effects whichseverely limit usefulness of the device. In addition, manufacture of thedevice is made more difficult by the limited room for wire bonding thecrowded bond pads to the narrow inner leads 18.

It should be noted that the LOC semiconductor devices 10 may be formedwithout a permanent substrate 14. The semiconductor die 12 may beseparately supported during attachment of the LOC lead frame 16, and thefinal encapsulated package outline may be represented by the edges 15.

Turning now to drawing FIGS. 3 and 4, a semiconductor device 70 having asemiconductor die 72/lead frame 76 configuration of the invention isdepicted. The semiconductor die 72 is positioned transversely relativeto the lead frame 76, i.e. such that its long sides 86 are perpendicularto the opposing rows 96 of outer lead ends. The semiconductor die 72 isshown as having peripheral rows 82A, 82B of bond pads 84 along opposinglong sides 86, parallel to the longitudinal centerline 90 of thesemiconductor die 72. The rows 82A, 82B of bond pads 84 are shown asgenerally extending between the opposed short sides 88 of thesemiconductor die 72.

The lead frame 76 is shown with three sets 100, 102, 104 of inner leads78 and outer leads 80. A first set 100 has non-LOC inner leads 78 whichare positioned off-die for wire-bonding with wires 98 to bond pads 84 ofrow 82A. A second set 102 has non-LOC inner leads 78 which are alsopositioned off-die for wire-bonding with conductive wires 98 to bondpads 84 of row 82B.

A third set 104 has inner leads 78 which are adhesively joined to theactive surface 94 of the semiconductor die 72 with an interveninginsulative layer 92, i.e. as leads over chip (LOC) leads. The third set104 is positioned between the two rows 82A, 82B of bond pads 84 andincludes leads wire-bonded to both rows.

In the example shown, the minimum width 106 of the critical functionnon-LOC inner leads 78 of lead set 100 in semiconductor device 70 isabout 30-60 percent greater than the minimum inner lead width 56 of thecomparable leads in LOC semiconductor device 10 of drawing FIG. 2. Thetwelve LOC inner leads 78 of lead set 104 are shown as having a width110 nearly double that of width 56 of the bulk of the LOC inner leads 18of the prior art device of drawing FIG. 2.

The sixteen non-LOC inner leads 78 of lead set 102 are shown to have awidth 108 which is about 30 to 100 percent greater than the inner leadwidth 56 of nearly all LOC inner leads 18 of the device of drawing FIG.2.

The twenty eight non-LOC leads 78 of lead set 100 are shown as having awidth 106 roughly comparable to the inner lead width 56 of nearly allLOC leads of the device of drawing FIG. 2. Thus, in this example,critical leads subject to inductance have a greater width whilenon-critical leads are formed with a reduced width. The lead widths maybe adjusted as needed for the particular use of the device.

The invention presents, on average, inner leads having a shorter lengthof the minimum width portions than the prior art device of drawing FIG.2. Moreover, the range of lead lengths is much greater. Thus, in theparticular example of drawing FIG. 3, twelve leads with very abbreviatedlengths are positioned near the semiconductor die comers to carrycritical signals subject to inductance.

As shown in drawing FIG. 4, the semiconductor device 70 is formed byadhesively joining a semiconductor die 72 to a substrate 74 with anintervening insulative layer 112. The hybrid lead frame 76 includes aset 102 of non-LOC inner leads 78 which are attached by conductive wires98 to a row 82B of bond pads 84. Another set 104 of LOC inner leads 78overlies the active surface 94 of semiconductor die 72 in a LOCconfiguration and is adhesively joined to the die with an interveninginsulative layer 92. In this embodiment, the LOC lead set 104 is thus ata different level than the non-LOC lead sets 102 (and 100, not visiblein FIG. 4). The outer leads 80 terminate in lead ends 114 which may bestraight or formed as J-leads or L-leads, etc., as known in the art. Thelead widths 108 and 110 are illustrated in the figure.

Following the wire bonding operation, the lead frame 76 and attachedsemiconductor die 72 are encapsulated and extraneous lead frame portionsexcised to form a device package.

The semiconductor device 70 may be formed without a permanent substrate74. The semiconductor die 72 may be separately supported duringattachment of the LOC lead frame 76, and the final encapsulated packageoutline may be represented by the edges 75. In this embodiment, thenon-LOC leads and LOC leads may be in the same horizontal plane.

As explained in the foregoing description, the invention provides widerand generally shorter inner leads 78 for small semiconductor dies 72.This obviates problems with inductance at high speed operation, makingthe design extremely useful for state-of-the-art applications.

The LOC leads overlying a large portion of the active surface alsoresult in enhanced heat transfer, improving the overall operation of thedevice.

In addition, the larger leads and greater pitch enable a much improvedwire-bonding operation in terms of speed and integrity.

While the invention has been described using a semiconductor die 72 witha pronounced difference in lengths of the long sides 86 and short sides88, the term “long side” includes sides having a length equal to orgreater than that of the “short side”. The semiconductor die 72 is shownas rectangular in surface shape, but may be of other shapes providedspace is provided between two sets of bond pads for entry of asignificant number of LOC leads.

It is apparent to those skilled in the art that there is provided hereinaccording to the invention a transverse hybrid LOC semiconductor packageparticularly useful with small dice and in enhancing the constructionand operability of a semiconductor package. Although the device has beendescribed and illustrated with reference to a specific embodimentthereof, it is not intended that the invention be limited by theillustrated embodiment. Those skilled in the art will recognize thatvarious modifications can be made without departing from the spirit andintent of the invention. For example, the invention is not limited todevices having a specific number or type of leads, bond pads, or dies,nor to a device with a permanent substrate supporting the die. Thus, itis intended that this invention encompass all such modifications andvariations which fall within the scope of the appended claims.

What is claimed is:
 1. A hybrid semiconductor device assembly,comprising: a semiconductor die including: an active surface thereon,the active surface having a first set of two opposing sides, each sideof said first set having a length, and a second set of two opposingsides substantially normal to said first set of two opposing sides, eachside of said second set of two opposing sides having a length, each sideof said second set of two opposing sides having a length greater thanthe length of each side of said first set of two opposing sides; a firstplurality of bond pads substantially aligned on said active surface ofsaid semiconductor die along one side of said second set of two opposingsides; a second plurality of bond pads substantially aligned on saidactive surface of said semiconductor die along the other side of saidsecond set of two opposing sides; and a lead frame having a pair ofopposed sides, each side having substantially the same length, at leastone side of said pair of opposed sides including at least one leadhaving a first width and a lead end terminating adjacent at least onebond pad of the first plurality of bond pads on the active surface ofsaid semiconductor die, the other side of said pair of opposed sides ofsaid lead frame including a plurality of leads thereon, at least onelead of said plurality of leads extending over a portion of the activesurface of said semiconductor die and having a second width differentfrom said first width and a lead end terminating over said portion ofthe active surface, and at least one other lead of said plurality ofleads having a lead end terminating adjacent at least one bond pad ofthe second plurality of bond pads on the active surface of saidsemiconductor die, said semiconductor die positioned having said firstset of two opposing sides extending transversely relative to the lengthof the opposed sides of said lead frame.
 2. The semiconductor deviceassembly of claim 1, wherein the at least one lead of the at least oneside of said pair of opposed sides of said lead frame having a firstwidth and a lead end terminating adjacent said at least one bond pad ofthe first plurality of bond pads is connected thereto.
 3. Thesemiconductor device assembly of claim 1, wherein the at least one leadof the plurality of leads of said other side of said pair of opposedsides of said lead frame extending over said portion of the activesurface of said semiconductor die and having a second width differentfrom said first width and a lead end terminating over said portion ofthe active surface is connected to said at least one bond pad of thefirst plurality of bond pads.
 4. The semiconductor device assembly ofclaim 1, wherein the at least one lead of the plurality of leads of saidother side of said pair of opposed sides of said lead frame extendingover said portion of the active surface of said semiconductor die andhaving said second width different from said first width and a lead endterminating over said portion of the active surface is connected to saidat least one bond pad of the second plurality of bonds.
 5. Thesemiconductor device assembly of claim 1, wherein the at least one otherlead of the plurality of leads of said other side of said pair ofopposed sides of said lead frame having a lead end terminating adjacentsaid at least one bond pad of the second plurality of bond pads isconnected thereto.
 6. A hybrid semiconductor device assembly,comprising: a semiconductor die including: an rectangular active surfacethereon, the rectangular active surface having a first set of twoopposing sides, each side of said first set of two opposing sides havinga length, and a second set of two opposing sides substantially normal tosaid first set of two opposing sides, each side of said second set oftwo opposing sides having a length greater than the length of each sideof said first set of two opposing side; a first plurality of bond padssubstantially aligned on said rectangular active surface of saidsemiconductor die along one side of said second set of two opposingsides; a second plurality of bond pads substantially aligned on saidrectangular active surface of said semiconductor die along the otherside of said second set of two opposing sides; and a lead frame having apair of opposed sides, and a plurality of leads, said plurality of leadscomprising first, second, and third sets of leads, the first set ofleads including at least one lead having a first width and a lead endterminating adjacent at least one bond pad of the first plurality ofbond pads, the second set of leads including at least one lead having asecond width different from said first width and a lead end terminatingadjacent at least one bond pad of the second plurality of bond pads, thethird set of leads including at least one lead extending over therectangular active surface of said semiconductor die and having a thirdwidth different from said first and second widths and a lead endterminating adjacent at least one bond pad selected from a groupconsisting of the first plurality of bond pads and the second pluralityof bond pads.
 7. The semiconductor device assembly of claim 6, whereinthe at least one lead of the first set of leads having a first width andsaid lead end terminating adjacent said at least one bond pad of thefirst plurality of bond pads is connected to said at least one bond padof the first plurality of bond pads.
 8. The semiconductor deviceassembly of claim 6, wherein the at least one lead of the second set ofleads having a second width different from said first width and saidlead end terminating adjacent said at least one bond pad of the secondplurality of bond pads is connected to said at least one bond pad of thesecond plurality of bond pads.
 9. The semiconductor device assembly ofclaim 6, wherein the at least one lead of the third set of leadsextending over the rectangular active surface of said semiconductor dieand having a third width different from said first and second widths andsaid lead end terminating adjacent said at least one bond pad selectedfrom a group consisting of the first plurality of bond pads and thesecond plurality of bond pads is connected to said at least one bond padof the second plurality of bond pads.
 10. The semiconductor deviceassembly of claim 6, wherein the at least one lead of the third set ofleads extending over the rectangular active surface of saidsemiconductor die and having a third width different from said first andsecond widths and said lead end terminating adjacent said at least onebond pad selected from said group consisting of the first plurality ofbond pads and the second plurality of bond pads is connected to said atleast one bond pad of the first plurality of bond pads.
 11. Thesemiconductor device assembly of claim 6, further comprising: asubstrate having a surface upon which said semiconductor die and aportion of said lead frame are adhesively mounted.
 12. The semiconductordevice of claim 6, wherein the at least one lead of said first set ofleads having said first width and said lead end terminating adjacentsaid at least one bond pad of the first plurality of bond pads and theat least one lead of said second set of leads having said second widthdifferent from said first width and said lead end terminating adjacentsaid at least one bond pad of the second plurality of bond pads arepositioned at a first level.
 13. The semiconductor device of claim 12,wherein the at least one lead of said third set of leads extending oversaid portion of the rectangular active surface of said semiconductor dieand having said third width different from said first and second widthsand said lead end terminating over said active surface is positioned ata second level.
 14. An assembly of an integrated circuit lead frame anda semiconductor die having a first pair of opposed sides, each side ofsaid first pair of opposed sides having a length, a second pair ofopposed sides, each side of said second pair of opposed sides having alength greater than the length of each side of said first pair ofopposed sides, and opposed rows of peripheral bond pads along at leastone of said first and second pairs of opposed sides, said lead framecomprising a plurality of inner leads including first, second, and thirdsets of leads, at least one lead in said first set of leads having awidth different from the width of at least one lead of the second andthird sets of leads, at least one lead of said second set of leadshaving a width different from the width of at least one lead of thefirst and third sets of leads, and at least one lead from said third setof leads having a width different from the width of at least one leadfrom the first and second sets of leads.